Wednesday, May 22, 2013

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Google Android News Android Forums

Verizon’s Samsung Galaxy S 4 bootloader hacked, boots custom recovery

Posted: 21 May 2013 12:35 PM PDT

Galaxy_S_4_Unlocked_Bootloader

Dan Rosenberg sent out a tweet this morning letting his followers know that he had successfully booted a custom recovery onto the Verizon version of the Galaxy S 4 and he is looking forward to the release.

If you’re going to be getting your Galaxy S 4 in the coming days you should keep a lookout for this method. We’ll be sure to update you once it’s public but we don’t know how long it will take for Verizon to issue a patch.

Source: Dan Rosenberg (@drjbliss)

Via: Droid Life


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AnTuTu Benchmark score for Samsung Galaxy Note III surfaces

Posted: 21 May 2013 12:32 PM PDT

samsung_galaxy_note_iii_antutu_benchmark

A new AnTuTu benchmark score has surfaced for a Samsung GT-N7200, believed to be the model number for the Galaxy Note III device. The test results, if accurate, show the device running Android 4.3 generated a score of almost 28,000. The device is thought to come with an Exynos 5 Octa chip, which tested considerably faster in a Samsung Galaxy S 4. It may be the device which tested at only 1.6 GHz has not yet been optimized as the Galaxy Note III is not expected to be released until later this year.

source: GSM Insider


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Samsung Galaxy S 4 with stock Android to launch only in US

Posted: 21 May 2013 11:06 AM PDT

google_edition_galaxy_s4Google has confirmed that the Samsung Galaxy S 4 with stock Android that was announced at last week’s I/O will launch only in the United States. Again, the phone that will run for $650 will come with a stock version of Android 4.2 with the bootloader unlocked, making it a perfect device for developers.

Google did not say that the phone will never be available overseas, just that it will initially be launched only in the US, so there is still hope for the “Google edition” fans around the world.

Source: CNET UK

 


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Verizon and Samsung hosting Galaxy S 4 promotional event Thursday in New York City

Posted: 21 May 2013 10:07 AM PDT

verizon_store_bryant_park

Samsung and Verizon Wireless are holding a promotional event in New York City to celebrate the launch of the Samsung Galaxy S 4, which will be in stores for the first time on on Thursday. The event will be held from 8:30 am to 8:00 pm on Thursday at the Bryant Park Verizon Wireless store on West 42nd Street in NYC.

Customers who purchase a Galaxy S 4 at the event will receive a free flipcover in their choice of black, white, pink, blue or green, while supplies last. The flipcovers can also be customized with etching in various themes and designs. Attendees can also participate in the “Samsung Galaxy Challenge” to test their current phone against the S4 for a chance to win a $25 Verizon gift card.


Come comment on this article: Verizon and Samsung hosting Galaxy S 4 promotional event Thursday in New York City

LG Optimus Pro G confirmed for May 30th ImaGination event in Macau

Posted: 21 May 2013 09:53 AM PDT

LG-Save-the-Date-May-30_Macau

LG will be holding an ImaGination Begins event next week in Macau, where it has been confirmed the company will announce the LG Optimus G Pro for some new Asian markets. The device is currently available in the U.S. through AT&T and has been released in the Korean and Japanese markets. There was some thought that LG might release the Optimus GK, a smaller version of the Optimus G Pro, at the event.

source: Android Central


Come comment on this article: LG Optimus Pro G confirmed for May 30th ImaGination event in Macau

Samsung Galaxy Mega to drop in the UK sometime in July

Posted: 21 May 2013 09:42 AM PDT

Galaxy Mega

Samsung’s monster of a smartphone, the Galaxy Mega, was announced a few months ago with availability for some parts of Europe and Russia, and now we’re hearing some dates for the UK. According to Clove, the 16 GB version of the massive 6.3 inch smartphone is expected to be available sometime in July. You can put down a preorder for the device for £459.99 and get it in either white or black.

This is definitely not a device for everyone, but if you’re trying to pick up a huge smartphone on a budget, you can’t go wrong with the Mega. Aside from the 6.3 inch screen, you’ll get a dual-core processor clocked at 1.7 GHz, 1.5 GB of RAM, and a 32o0 mAh battery. Anybody planning on picking one of these up?

source: Clove

via: Android Central


Come comment on this article: Samsung Galaxy Mega to drop in the UK sometime in July

NVIDIA shows off world’s most efficient CAT 4 LTE modem

Posted: 21 May 2013 08:57 AM PDT

NVIDIA_Tegra_3_CES_2013

NVIDIA has really stepped up and made some great innovations for Android as a whole, and they’re not showing any signs of slowing down. The latest from the graphics chip maker is a demo of their Tegra 4i, which is the version of the Tegra 4 designed to be run in smartphones, complete with LTE modem. When the chip was first debuted, it was capable of reaching 100 mbps download speeds, which is considered CAT 3 speeds. (Most ethernet cables you probably use in your homes are CAT 5 cables, for reference)

Well, fast forward a few months, and NVIDIA has introduced a software update for the 4i that bumps up the down speeds of the modem to reach 150 mbps, which is considered CAT 4. The impressive thing here is that no new hardware was introduced; NVIDIA software-defined radio tech is running the show here. So not only can this processor’s modem reach speeds higher than what’s even available in the world today, but it can be made faster through software tweaks instead of adding hardware and is only 40% of the size of other LTE modems in use today. Watch out, Qualcomm.

source: NVIDIA Blogs


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Pictures of LG Optimus F3 released, expected to launch on Sprint in coming weeks

Posted: 21 May 2013 08:52 AM PDT

LG_Optimus_F3_Sprint

LG has been releasing devices for a while now that have generated a decent amount of buzz, and it looks like the LS720 Optimus F3 is going to be added to that list. This phone will be a budget-friendly LTE handset, with a 4-inch WVGA screen and a dual-core processor. It will ship with Android Jelly Bean 4.1.2 and a strong 2,460mAh battery. Expect the phone to hit the shelves within the next few weeks, priced aggressively on contract.

Source: Phone Arena


Come comment on this article: Pictures of LG Optimus F3 released, expected to launch on Sprint in coming weeks

Student catches Google’s eye with 30-second cellphone charger

Posted: 21 May 2013 08:48 AM PDT

android_battery

The smartphone battery is one part of our phones that’s fallen a bit behind the technological curve. An Android device can give you answers before you even ask a question, it can register input without actually being touched, or it can make a visually appealing clip out of photos and videos with almost no work from you, but it’s you’re always going to have to worry about charging it at least once a day, with relatively few exceptions. Well, 18 year old Eesha Khare looked into a way to minimize that problem by developing a supercapacitor that can charge phones in under 30 seconds for this year’s Intel International Science and Engineering Fair.

Naturally, something that impressive was bound to catch some attention, and Google has apparently contacted Khare about the technology. She hasn’t disclosed any specifics about what Google has talked to her about, but she has said that she didn’t want to sell her work just yet. The technology she’s working on right now is already built to hold 10,000 charge-recharge cycles, which is 10 times more than the standard battery in our phones today. Needless to say, it’s easy to see why Google would want to figure out how to implement that type of technology in their own devices. Hopefully this won’t be the last of Khare we see in the near future.

source: Slashgear


Come comment on this article: Student catches Google’s eye with 30-second cellphone charger

Sandisk begins customer sampling of flash memory products based on 1Ynm process technology

Posted: 21 May 2013 07:11 AM PDT

Sandisk_inand_64gb

 

It’s no surprise that as the processors for our Android devices get faster, other areas such as the device’s memory get faster as well. That’s why Sandisk has been working behind the scenes on its flash memory technology and recently announced it has begun customer sampling of flash memory products based on its 1Ynm process technology. For those of you not familiar with this technology, Sandisk is able to develop smaller-scale memory cell sizes, allowing for multi-level data storage management schemes which help bring multi-level cell (MLC) NAND flash memory chips— chips that don’t even come close to compromising performance or reliability when used on our devices out there. So the hope is that this brand-new technology will ultimately bring smaller and less circuitry, while simultaneously bringing high capacity memory units at a lower cost. And hey— who wouldn’t want a more efficient and faster microSD card or other flash memory unit?

No word yet on when this technology will hit the general public yet, but hopefully we’ll see it on our devices sooner than later. Hit the break for the full presser from Sandisk.

 

SANDISK ADVANCES ITS INDUSTRY-LEADING MANUFACTURING TECHNOLOGY

MILPITAS, Calif., May 20, 2013— SanDisk Corporation (NASDAQ: SNDK), a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology.

SanDisk's achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.

SanDisk's second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk’s All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk's three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.

SanDisk's latest breakthrough in shrinking the circuitry used in flash memory chips allows higher capacity products and lower cost manufacturing techniques to be employed when creating SanDisk's flash memory solutions. Consumers and businesses worldwide will benefit from this new advanced manufacturing technology by having access to higher capacity and smaller-sized flash memory chips from SanDisk for mobile phones, tablets, Solid State Drives (SSDs) for client and enterprise markets, and consumer products.

About SanDisk

SanDisk Corporation (NASDAQ: SNDK) is a global leader in flash memory storage solutions, from research and development, product design and manufacturing to branding and distribution for OEM and retail channels. Since 1988, SanDisk’s innovations in flash memory and storage system technologies have provided customers with new and transformational digital experiences. SanDisk’s diverse product portfolio includes flash memory cards and embedded solutions used in smart phones, tablets, digital cameras, camcorders, digital media players and other consumer electronic devices, as well as USB flash drives and solid-state drives (SSD) for the computing market. SanDisk’s products are used by consumers and enterprise customers around the world.

SanDisk is a Silicon Valley-based S&P 500 and Fortune 500 company, with more than half its sales outside the United States. For more information, visit www.sandisk.com.

© 2013 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s).

This press release contains certain forward-looking statements, including expectations for technologies, performance, costs, product capabilities, markets and customers that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: the market demand for our products may grow more slowly than our expectations or the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent quarterly report on Form 10-Q and our annual report on Form 10-K. We do not intend to update the information contained in this press release.

Media Contact:
Tom Beermann
SanDisk Corporation
408-801-1443
tom.beermann@sandisk.com


Come comment on this article: Sandisk begins customer sampling of flash memory products based on 1Ynm process technology

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